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LHF16KTV
Table 3. Bus Operations(BYTE#=V IH )
9
Mode
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
Notes
1,2,3,9
3
3
4
9
9
3,7,8,9
RP#
V IH
V IH
V IH
V IL
V IH
V IH
V IH
CE 0 #
V IL
V IL
V IH
V IH
V IL
X
V IL
V IL
V IL
CE 1 #
V IL
V IL
V IH
V IL
V IH
X
V IL
V IL
V IL
OE#
V IL
V IH
X
X
V IL
V IL
V IH
WE#
V IH
V IH
X
X
V IH
V IH
V IL
Address
X
X
X
X
See
Figure 4
See Table
7~11
X
V PP
X
X
X
X
X
X
X
DQ 0-15
D OUT
High Z
High Z
High Z
Note 5
Note 6
D IN
STS
X
X
X
High Z
High Z
High Z
X
Table 3.1. Bus Operations(BYTE#=V IL )
Mode
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
Notes
1,2,3,9
3
3
4
9
9
3,7,8,9
RP#
V IH
V IH
V IH
V IL
V IH
V IH
V IH
CE 0 #
V IL
V IL
V IH
V IH
V IL
X
V IL
V IL
V IL
CE 1 #
V IL
V IL
V IH
V IL
V IH
X
V IL
V IL
V IL
OE#
V IL
V IH
X
X
V IL
V IL
V IH
WE#
V IH
V IH
X
X
V IH
V IH
V IL
Address
X
X
X
X
See
Figure 4
See Table
7~11
X
V PP
X
X
X
X
X
X
X
DQ 0-7
D OUT
High Z
High Z
High Z
Note 5
Note 6
D IN
STS
X
X
X
High Z
High Z
High Z
X
NOTES:
1. Refer to DC Characteristics. When V PP ≤ V PPLK , memory contents can be read, but not altered.
2. X can be V IL or V IH for control pins and addresses, and V PPLK or V PPH1/2/3 for V PP . See DC Characteristics for
V PPLK and V PPH1/2/3 voltages.
3. STS is V OL (if configured to RY/BY# mode) when the WSM is executing internal block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration algorithms. It is floated during when the WSM is not busy,
in block erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or
deep power-down mode.
4. RP# at GND ± 0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. See Section 4.5 for query data.
7. Command writes involving block erase, full chip erase, (multi) word/byte write or block lock-bit configuration are
reliably executed when V PP =V PPH1/2/3 and V CC =V CC1/2 .
8. Refer to Table 4 for valid D IN during a write operation.
9. Don’t use the timing both OE# and WE# are V IL .
Rev. 2.0
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